EWMOVPEX. 10th European Workshop on Metalorganic Vapour Phase Epitaxy - 2003

EWMovpex_sm - Cover ISBN: 88-8305-007-X
e-ISBN: 88-8305-008-8 

The 10th edition of the "European Workshop on Metalorganic Vapour Phase Epitaxy", held at the University of Lecce Ecotekne Congress Center, has been organised by the Dept. of Innovation Engineering of the University and by the Lecce Section of the CNR Institute for Microelectronics and Microsystems (IMM - CNR). Both Institutions have been deeply involved in MOVPE since the last 15 years, with a substantial growth of scientific interests and activities in the last few years. Current researches at Lecce span now through almost all classes of semiconducting compounds and structures for both opto- and micor-electronics and photonics. Lecce could be thus regarded as one of the MOVPE 'poles' of Italy.







One-dimensional assembly of quantum dots and heterostructures Details     PDF
L. Samuelson

Size and shape controlled GaAs nanowhiskers grown by MOVPE Details     PDF
M. Borgström, T. Mårtensson, M. Karlsson, A. Persson, J. Ohlsson, K. Deppert, W. Seifert, L. Samuelson

Investigation of GaAs nanowires grown via MOVPE using the Vapour-Liquid-Solid technique Details     PDF
Bhattacharya, R. Banerjee, R. Ratan, S. Kar, M.R. Gokhale, A.P. Shah, J. Bhattacharyya, K.L. Narasimhan, B.M. Arora

Real-time control of quantum dot laser growth by reflectance anisotropy spectroscopy Details     PDF
U. W. Pohl, I. Kaiander, C. Kaspari, S. Weeke, R. L. Sellin, J.-T. Zettler, D. Bimberg, W. Richter

Monolayer splitting for InAs/GaAs quantum dots Details     PDF
K. Pötschke, L. Müller-Kirsch, R. Heitz, R.L. Sellin, U.W. Pohl, D. Bimberg, N. Zakharov, P. Werner

Growth of GaAs and InAs quantum dots by metalorganic sources of hyperthermal energies Details     PDF
M. Ozeki, Y. Shimizu

MOVPE prepared self-organised InAs/GaAs mono- and multi-layer quantum dot structures: magneto-photoluminescence study of electronic transitions Details     PDF
A. Hospodková, K. Kuldová, J. Oswald, E. Hulicius, J. Pangrác, T. Simecek, I. Vávra

Alternative-precursor growth of InGaAs/GaAs quantum dots for laser applications Details     PDF
R. L. Sellin, I. Kaiander, U. W. Pohl, D. Bimberg

Spontaneous quantum dot formation due to strain induced phase segregation of GaInAs Details     PDF
M. Borgström, A. Mikkelsen, E. Lundgren, L. Outtara, L. Samuelson, W. Seifert

Morphological characterization of InGaAs QDs MOCVD-grown in nitrogen atmosphere Details     PDF
V. Tasco, M. A. Signore, C. Pascali, I. Tarantini, A. Passaseo, R. Cingolani

InAs quantum dots grown on InAlGaAs lattice matched to InP Details     PDF
M. Borgström, M.P. Pires, T. Bryllert, S. Landi, W. Seifert, P.L. Souza

Dense arrays of semiconductor quantum dots with controlled positions grown in inverted pyramids Details     PDF
E. Pelucchi, S. Watanabe, B. Dwir, K. Leifer, E. Kapon

Preparation of GaN quantum dots by MOVPE Details     PDF
Takao Nagatomo, Takayuki Nishino, Minoru Abasaki, Ryuhei Inazawa

Aluminum nanoparticles embedded into GaAs: deposition and epitaxial overgrowth by MOCVD Details     PDF
V. Shashkin, V. Daniltsev, M. Drozdov, Yu. Drozdov, A. Murel, N. Vostokov, S. Rushworth

Magnetic Properties of Mn-Doped III-Nitrides Grown by MOCVD Details     PDF
S. M. Bedair

MOCVD growth of ZnO films Details     PDF
R. Triboulet

MOVPE growth of high-quality ZnO Details     PDF
N. Oleynik, A. Dadgar, D. Forster, F. Bertram, S. Deiter, J. Bläsing, U. Haboeck, A. Diez, A. Hoffmann, M. Seip, A. Greiling, J. Christen, A. Krost

MOCVD deposition of Zinc Oxide using diethylzinc and n-butanol Details     PDF
D. A. Lamb, S. J. C. Irvine

Atmospheric pressure MOCVD of highly conductive thin films of CdO Details     PDF
D. M. Ellis, S. J. C. Irvine

ZnO growth by MOCVD: numerical study Details     PDF
R. Tena-Zaera, J. Zúñiga-Pérez, C. Martínez-Tomás, V. Muñoz-Sanjosé

Investigation of ZnTe homoepitaxial layers grown by metalorganic vapour phase epitaxy on VGF-grown (100)ZnTe:P wafers Details     PDF
M. Traversa, N. Lovergine, P. Prete, K. Yoshino, M. Ozeki, T. Di Luccio, M. Pentimalli, A. Cappello, L. Tapfer, A. M. Mancini

Nonequilibrium carrier dynamics in MOVPE-grown homoepitaxial ZnTe layers and substrate material Details     PDF
R. Aleksiejunas, T. Malinauskas, M. Sudzius, K. Jarasiunas, N. Lovergine, M. Traversa, P. Prete, A. M. Mancini

E-beam longitudinal pumped laser on MOVPE-grown hexagonal CdSSe/CdS MQW structure Details     PDF
V. I. Kozlovsky, V. Yu. Bondarev, D. A. Sannikov, P. I. Kuznetsov, V.A. Jitov, G. G. Yakushcheva, L. Yu. Zakharov, K.P. O’Donnell, C. Trager-Cowan

Doping efficiency of Sb in ZnSe grown by MOVPE Details     PDF
Toshiyuki Ido, Hideo Goto

MOVPE growth and DLTS study of Mn-doped ZnSe Details     PDF
Toshiyuki Ido, Yuri Sawada, Hideo Goto

Growth and characterization of Sb-doped Cdx Mn1-x Te grown by MOVPE Details     PDF
Hideo Goto, Takaya Sakuma, Satomi Sawada, Toshiyuki Ido

GaAs based lasers for telecommunication Details     PDF
A. Forchel

InP-based materials for optoelectronic devices: old issues and new challenges for MOVPE” Details     PDF
D. Bertone

Studies on InP:Fe growth in a close-spaced showerhead MOVPE reactor Details     PDF
David Söderström, Gerardo Fornuto, Aurelio Buccieri

Interlayer formation due to arsine stabilisation during interruptions of MOVPE-growth of InGaP Details     PDF
A. Knauer, P. Krispin, U. Zeimer, H. Kissel, M. Weyers

Influence of ordered and random part on properties of InGaP alloy grown by MOVPE Details     PDF
J. Novák, S. Hasenöhrl, M. I. Alonso, M. Garriga

Temperature dependent magnetoresistance characterization of ordered strained InGaP grown by MOVPE Details     PDF
S. Hasenöhrl, J. Betko, M. Morvic, J. Novák, J. Fedor

Correlation between gas phase and solid composition in Bx Ga1-x As/GaAs epilayers grown by MOVPE Details     PDF
H. Dumont, D. Rutzinger, C. Vincent, J. Dazord, Y. Monteil, F. Alexandre, J. L. Gentner

Cross-sectional AFM of GaAs-based multilayer heterostructure with thin AlAs marks Details     PDF
V. Shashkin, N. Vostokov, V. Daniltsev, Yu. Drozdov, G. Pakhomov

Carbon doping of AlGaAs using CBr4 in a nitrogen environment Details     PDF
Alok Rudra, Klaus Leifer, Aicha Hessler, Eli Kapon

Si- and Zn-doping of lattice matched BxInzGa1-x-zAs- and InxGa1-xNyAs1-y-layers Details     PDF
Gunnar Leibiger, Claudia Krahmer, Volker Gottschalch, Gabriele Benndorf, Volker Riede

Properties of vanadium-doped GaAs grown by MOVPE Details     PDF
A. Bchetnia, A. Rebey, J. C. Bourgoin, J. Cenogora, JL. Fave, B. Eljani

Comparison of CBr4 and DTBSi as precursors for p-type doping of GaSb Details     PDF
Z. Kollonitsch, K. Möller, C. Giesen, M. Heuken, F. Willig, T. Hannappel

Planarised selective regrowth of semi-insulating InP by LP-MOVPE using tertiarybutylchloride Details     PDF
S. Gouraud, D. Franke, E. Gil Lafon, A. Paraskevopoulos

A multiscale approach to the study of epitaxial film evolution during MOCVD Details     PDF
Alessandro Veneroni, Carlo Cavallotti, Maurizio Masi, Davide Moscatelli, Sergio Carrà

MOVPE growth studies of Mn-incorporated GaInAs/InP layers Details     PDF
S Hara, M Lampalzer, T. Torunski, K Volz, W Treutmann, W Stolz

Te co-doping and room temperature ferromagnetism in (MnGa)As-cluster layers by MOVPE Details     PDF
M. Lampalzer, K. Volz, S. Hara, W. Treutmann, S. Nau, T. Torunski, W. Stolz

Correlation of structure and magnetic properties of MOVPE grown (MnGa)As clusters in GaAs Details     PDF
k. Volz, M. Lampalzer, W. Treutmann, W Stolz

In-situ monitoring and analysis of GaSb (100) substrate deoxidation Details     PDF
K. Möller, L. Töben, Z. Kollonitsch, Ch. Giesen, M. Heuken, F. Willig, T. Hannappel

LP-MOVPE growth for high-speed electronic devices on InP Details     PDF
W. Prost

Indium accumulated layer control to sharp InGaAs/(AI)GaAs QW interfaces Details     PDF
A.A. Marmalyuk, A.V Petrovsky, O.I. Govorkov, D.B. Nikitin, A.A. Padalitsa, P.V. Bulaev, I.D. Zalevsky

Study of the interface properties in InGaP/GaAs multi quantum wells grown by Low-Pressure MOVPE from liquid sources Details     PDF
M. Begotti, M. Longo, R. Magnanini, A. Parisini, L. Tarricone, C. Bocchi, L. Lazzarini, L. Nasi, M. Geddo

Influence of substrate orientation on AIAs/GaAs distributed Bragg reflectors Details     PDF
V. Tasco, C. Pascali, M.A. Signore, I. Tarantini, A. Passaseo, R. Cingolani

MOVPE growth of AlGaAs/GaAs and InGaP/GaAs structures on patterned GaAs substrates Details     PDF
R. Kudela, P. Strinchovanec, D. Gregusova, V. Cambel, J. Soltys, S. Hasenhorl, J Novak, I. Kostic, G. Attolini, C. Pelosi

Experimental study of strain-compensated InGaAs-In(GaAl)As MQW structures for electroabsorption modulator applications Details     PDF
J. Decobert, C. Kazmierski, M. le Pallec, J.G. Provost, P. Pecci

Lasers with thin strained InAs layers in GaAs electro-optical characterisation and operation at elevated temperatures Details     PDF
A. Mackal, P. Hazdra, E. Hulicius, J. Oswald, J. Pangrác, K. Melichar, A. Hospodková, T. Simecek

MOVPE growth and properties of [111]A-oriented piezoelectric InGaAs/GaAs/AlGaAs highly strained quantum well laser structures Details     PDF
Jongseok Kim, Soohaeng Cho, A. Majerfeld, A. Sanz-Hervás, G. Patriarche, B. W. Kim

Effect of Al-content reduction in (AlGa)As cladding layers of MOVPE grown high-power laser diodes Details     PDF
Andrzej Malag, Anna Kozlowska, Marek Wesolowski

Comparison of AlGaAs and AlInP cladding layers for red edge-emitting lasers Details     PDF
M. Zorn, H. Wenzel, A. Knigge, U. Zeimer, M. Weyers

Lateral confinement optimisation of 1300 nm InGaAlAsP/InGaAsP Fabry-Perot lasers Details     PDF
Roberta Campi, J. Berggren, A. Buccieri, P. Gotta, G. Landgren, D. Sarocchi, P. Valenti

Optimization of highly strained InGaAs quantum wells for 1.3-µm vertical-cavity lasers Details     PDF
P. Sundgren, J. Berggren, M. Hammar

Surface morphology of active layers for VCSEL application Details     PDF
W. Strupinski, M. Wesolowski, A. Jasik

InAlGaAs/InP MQW structures grown by MOVPE in nitrogen atmosphere for 1.55 µm VCSELs Details     PDF
A. Mereuta, A. Mircea, A. Rudra, V. Iakovlev, A. Syrbu, G. Suruceanu, C.-A. Berseth, A. Caliman, K. Leifer, E. Kapon

MOVPE of diluted nitride III/V-compounds Details     PDF
W. Stolz

Epitaxial growth and device fabrication of GaN based electronic and optoelectronic structures Details     PDF
S. Mueller

Growth of strained cubic GaN on GaAs(100) by low-temperature MOVPE Details     PDF
J. Sormunen, J. Toivonen, M. Sopanen, H. Lipsanen

Growth of Silicon-doped GaN using ditertiarybutylsilane Details     PDF
C. J. Deatcher, C. Liu, M.G. Cheong, I.M. Watson, L. M. Smith, S. Rushworth, A. Widdowson

The effect of substrate nitridation temperature and buffer design on the quality of GaN epitaxial films Details     PDF
Maria Losurdo, Danilo Giuva, Pio Capezzuto, Gon Namkoong, Alan W. Doolittle, April Brown, Giovanni Bruno

Study of the interaction of atomic hydrogen with GaN surfaces monitored by spectroscopic ellipsometry Details     PDF
Maria Losurdo, Maria Michela Giangregorio, Danilo Giuva, Pio Capezzuto, Giovanni Bruno

Modeling and experimental analysis of GaN MOVPE in AIX 200 RF reactor Details     PDF
R.A. Talalaev, E.V. Yakovlev, Yu.N. Makarov, B.S. Yavich, W.N. Wang

Chemical aspects of the AIII nitride epitaxial growth by MOVPE Details     PDF
Leitner Jindrich, Stejskal Josef, Sofer Zdenek

On the mechanisms affecting aluminum transport and incorporation efficiency during AlGaN MOVPE Details     PDF
E.V. Yakovlev, R.A. Talalaev, A.N. Vorob’ev, Yu.N. Makarov

Characterisation of AlGaN epilayers on (0001) sapphire grown by LP-MOVPE Details     PDF
C. McAleese, M.J. Kappers, F.D.G. Rayment, D.M. Graham, P. Dawson, E.J. Thrush, C.J. Humphreys

The optical and electrical characterization of Si-doped AlGaN Details     PDF
G.R. James, A.W.R. Leitch, F. Omnès, M.C. Wagener

Dimethylhydrazine: a potential competitor for ammonia for the growth of GaInN structures? Details     PDF
V. Pérez-Solórzano, B. Santic, A. Gröning, M. Jetter, M. Seip, H. Schweizer, F. Scholz

Compositional studies of InGaN epilayers and magnesium-doped GaN grown by MOVPE, using wavelength dispersive X-ray spectrometry Details     PDF
C. J. Deatcher, C. Liu, M.G. Cheong, I.M. Watson, R. W. Martin, L. M. Smith, S. Rushworth, S. Pereira

A study of In incorporation in InGaN layers grown by atmospheric pressure MOVPE Details     PDF
Matteo Bosi, Roberto Fornari

Assessment of the short and long range homogeneity of MOVPE-grown InGaN epilayers Details     PDF
R. Fornari, M. Bosi, M. Avella, O. Martinez, J. Jimenez

Modeling analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors Details     PDF
L. Kadinski, V. Merai, A. Parekh, J. Ramer, E. Armour, R. Stall, A. Gurary, A. Galyukov, Yu. Makarov

Novel three dimensional Ga structures on GaAs (100) substrates obtained by MOVPE Details     PDF
M. Sacilotti, L. Imhoff, S. Bourgeois, C. Dumas, M. Mesnier, C. Josse Courty, Th. Chiaramonte, L. Cardoso, J. Decobert

Growth and characterization of high efficiency III-V multi-junction solar cells for terrestrial and space applications Details     PDF
J.M. Olson

Strain studies on GaN-based structures on SiC Details     PDF
A. Ivanov, V. Dumitru, G. Moutchnik, H. Schweizer, F. Scholz

Strain engineering during MOVPE growth of GaN on Si(111) Details     PDF
A. Dadgar, G. Straßburger, J. Bläsing, T. Riemann, U. Haboeck, P. Veit, O. Contreras, A. Diez, F.A. Ponce, A. Hoffmann, J. Christen, A. Krost

In-plane strain anisotropy and lattice parameters of GaN films grown on a-plane sapphire by metalorganic vapor phase epitaxy Details     PDF
V. Darakchieva, P.P. Paskov, T. Paskova, M. Heuken, B. Monemar

Reduction of dislocation density and dislocation analysis of MOVPE grown GaN layers Details     PDF
Frank Habel, Matthias Seyboth

Reduction of threading dislocations density in GaN on sapphire by in-situ SixNy interlayer Details     PDF
K. Pakula, R. Bozek, M. Kowalska, E. Zielinska-Rohozinska, J.M. Baranowski

Microstructure evolution in MOVPE-grown AlN/GaN superlattices with different periods Details     PDF
E. Valcheva, T. Paskova, G. Radnoczi, L. Hultman, B. Monemar, H. Amano, I. Akasaki

Reduction of dislocation density using in situ deposited SiNx intermediate layers in AlGaN/GaN heterostructures grown by MOVPE on SiC substrates Details     PDF
S. Miller, H.-J. Lugauer, S. Bader, G. Brüderl, U. Strauss, A. Lell, V. Härle, K. Engl, M. Beer

Growth and properties of InN/Al2O3 and InN/GaN/Al2O3 studied by in situ Spectroscopic Ellipsometry and different ex situ techniques Details     PDF
M. Drago, U. W. Pohl, T. Schmidtling, W. Richter

Electron transport in MOVPE grown InGaN/GaN MQW in moderate magnetic field Details     PDF
B. Arnaudov, T. Paskova, O. Valassiades, S. Evtimova, P. P. Paskov, B. Monemar, M. Heuken

Growth optimisation of GaInN/GaN MQW RCLED structures. Device performances and reliability Details     PDF
M.A. Di Forte-Poisson, A. Romann, M. Tordjman, R. Aubry, M. Magis, J. Di Persio, P. Maaskant, B. Corbett

Blue-laser MOVPE structures grown on bulk GaN crystals Details     PDF
P. Prystawko, R. Czernetzki, K. Krowicki, G. Targowski, M. Sarzynski, M. Leszczynski, P. Perlin, T. Suski, P. Wisniewski, I. Grzegory

Growth of buffer structures for AlGaN/GaN HEMT on silicon substrates Details     PDF
Y. Dikme, H. Kalisch, M. Fieger, H.M. Chern, A. Szymakowski, P. Javorka, M. Marso, N. Kaluza, R.H. Jansen, M. Heuken

The growth of AlGaN/GaN HEMT structures in large scale Planetary Reactors such as the AIX 2600G3 HT in 8x4 inch configuration Details     PDF
Oliver Schoen, Assadullah Alam, Bernd Schineller, Michael Heuken

AlGaN/GaN HFET including a thin AlN carrier exclusion layer Details     PDF
R.S. Balmer, D.E.J Soley, K.P. Hilton, K.J. Nash, M.J. Uren, A. Wells, M. Missous, T. Martin


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e-ISBN: 88-8305-008-8