In-plane strain anisotropy and lattice parameters of GaN films grown on a-plane sapphire by metalorganic vapor phase epitaxy | Darakchieva | EWMOVPEX. 10th European Workshop on Metalorganic Vapour Phase Epitaxy

In-plane strain anisotropy and lattice parameters of GaN films grown on a-plane sapphire by metalorganic vapor phase epitaxy

V. Darakchieva, P.P. Paskov, T. Paskova, M. Heuken, B. Monemar

DOI Code: 10.1285/i9788883050088p327

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