The effect of substrate nitridation temperature and buffer design on the quality of GaN epitaxial films | Losurdo | EWMOVPEX. 10th European Workshop on Metalorganic Vapour Phase Epitaxy

The effect of substrate nitridation temperature and buffer design on the quality of GaN epitaxial films

Maria Losurdo, Danilo Giuva, Pio Capezzuto, Gon Namkoong, Alan W. Doolittle, April Brown, Giovanni Bruno

DOI Code: 10.1285/i9788883050088p267

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