Reduction of dislocation density using in situ deposited SiNx intermediate layers in AlGaN/GaN heterostructures grown by MOVPE on SiC substrates | Miller | EWMOVPEX. 10th European Workshop on Metalorganic Vapour Phase Epitaxy

Reduction of dislocation density using in situ deposited SiNx intermediate layers in AlGaN/GaN heterostructures grown by MOVPE on SiC substrates

S. Miller, H.-J. Lugauer, S. Bader, G. Brüderl, U. Strauss, A. Lell, V. Härle, K. Engl, M. Beer

DOI Code: 10.1285/i9788883050088p343

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