Reduction of dislocation density and dislocation analysis of MOVPE grown GaN layers | Habel | EWMOVPEX. 10th European Workshop on Metalorganic Vapour Phase Epitaxy

Reduction of dislocation density and dislocation analysis of MOVPE grown GaN layers

Frank Habel, Matthias Seyboth

DOI Code: 10.1285/i9788883050088p331

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