Experimental study of strain-compensated InGaAs-In(GaAl)As MQW structures for electroabsorption modulator applications | Decobert | EWMOVPEX. 10th European Workshop on Metalorganic Vapour Phase Epitaxy

Experimental study of strain-compensated InGaAs-In(GaAl)As MQW structures for electroabsorption modulator applications

J. Decobert, C. Kazmierski, M. le Pallec, J.G. Provost, P. Pecci

DOI Code: 10.1285/i9788883050088p223

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