Reduction of threading dislocations density in GaN on sapphire by in-situ SixNy interlayer | Pakula | EWMOVPEX. 10th European Workshop on Metalorganic Vapour Phase Epitaxy

Reduction of threading dislocations density in GaN on sapphire by in-situ SixNy interlayer

K. Pakula, R. Bozek, M. Kowalska, E. Zielinska-Rohozinska, J.M. Baranowski

DOI Code: 10.1285/i9788883050088p335

Full Text: PDF

کاغذ a4

Creative Commons License

This work is licensed under a Creative Commons Attribuzione - Non commerciale - Non opere derivate 3.0 Italia License.