Reduction of threading dislocations density in GaN on sapphire by in-situ SixNy interlayer | Pakula | EWMOVPEX. 10th European Workshop on Metalorganic Vapour Phase Epitaxy

Reduction of threading dislocations density in GaN on sapphire by in-situ SixNy interlayer

K. Pakula, R. Bozek, M. Kowalska, E. Zielinska-Rohozinska, J.M. Baranowski

DOI Code: 10.1285/i9788883050088p335

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