E-beam longitudinal pumped laser on MOVPE-grown hexagonal CdSSe/CdS MQW structure
Abstract
En
CdSSe/CdS multi quantum well structures were grown by metalorganic vapor phase epitaxy (MOVPE) on a CdS substrate misoriented by 12−15º from (0001) towards (1010). Microcavities with dielectric oxide mirrors were fabricated on the basis of these structures. Lasing in the 535−590 nm spectral range was achieved on different structures under longitudinal electron beam pumping at room temperature. The relatively high threshold of the laser and the blueshift from the spontaneous emission peak to lasing wavelength were explained by taking into account the type−II band alignment of the active region.
CdSSe/CdS multi quantum well structures were grown by metalorganic vapor phase epitaxy (MOVPE) on a CdS substrate misoriented by 12−15º from (0001) towards (1010). Microcavities with dielectric oxide mirrors were fabricated on the basis of these structures. Lasing in the 535−590 nm spectral range was achieved on different structures under longitudinal electron beam pumping at room temperature. The relatively high threshold of the laser and the blueshift from the spontaneous emission peak to lasing wavelength were explained by taking into account the type−II band alignment of the active region.
DOI Code:
10.1285/i9788883050088p107
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